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http://hdl.handle.net/10183/95344
Título | Recrystallization behavior of silicon implanted with iron |
Autor |
Souza, Joel Pereira de
Amaral, Livio Fichtner, Paulo Fernando Papaleo |
Abstract | The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and releasedw hen they are reached by the moving a-c interface during the SPEG process. |
Contido em | Journal of Applied Physics. Woodbury. Vol. 71, n. 11 (June 1992), p. 5423-5426 |
Assunto |
Fisica da materia condensada
Implantacao de ions |
Origem | Estrangeiro |
Tipo | Artigo de periódico |
URI | http://hdl.handle.net/10183/95344 |
Arquivos | Descrição | Formato | |
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000056039.pdf (590.0Kb) | Texto completo (inglês) | Adobe PDF | Visualizar/abrir |
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