Recrystallization behavior of silicon implanted with iron

dc.contributor.author	Souza, Joel Pereira de	pt_BR
dc.contributor.author	Amaral, Livio	pt_BR
dc.contributor.author	Fichtner, Paulo Fernando Papaleo	pt_BR
dc.date.accessioned	2014-05-17T02:06:46Z	pt_BR
dc.date.issued	1992	pt_BR
dc.identifier.issn	0021-8979	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/95344	pt_BR
dc.description.abstract	The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and releasedw hen they are reached by the moving a-c interface during the SPEG process.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Journal of Applied Physics. Woodbury. Vol. 71, n. 11 (June 1992), p. 5423-5426	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.title	Recrystallization behavior of silicon implanted with iron	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000056039	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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