Mostrar registro simples

dc.contributor.authorSchreiner, Wido Herwigpt_BR
dc.contributor.authorMosca Junior, Dante Homeropt_BR
dc.contributor.authorTeixeira, Sergio Ribeiropt_BR
dc.contributor.authorMattoso Filho, Ney Pereirapt_BR
dc.date.accessioned2014-05-17T02:06:46Zpt_BR
dc.date.issued1992pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95346pt_BR
dc.description.abstractWe report on the successful epitaxial growth of Fe/Cu superlattices on Si( 111) wafers at room temperature. The superlattices were characterized with x-ray diffraction, conversion electron Mossbauer spectrometry, and selected area electron diffraction experiments. The epitaxial growth is crucially dependent on which element is deposited first on the bare Si( 111).en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 72, n. 12 (Dec. 1992), p. 5682-5686pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectIntermetalicospt_BR
dc.titleEpitaxial fe/cu superlattices on Si(111)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000056146pt_BR
dc.type.originEstrangeiropt_BR


Thumbnail
   

Este item está licenciado na Creative Commons License

Mostrar registro simples