Electrical Activation of Bismuth Implanted Into Silicon by Rapid Thermal Annealing and Kinetics of Defects

Abstract

The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0~x1014 cm-² at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approximately 95% of the Bi dose is found substitutional and 90% is electrically active after annealing is performed at 600 °C for times longer than 1 min. The electrical activation yield of Bi after RTA at temperatures ≥700 °C is observed to decrease when increasing the temperature and time of the annealing process. The data taken from electrical measurements and angular scan across the (100) axis are evidence that the electrically inactive concentration of the Bi correlates with the concentration of Bi atoms located slightly displaced from the crystal rows.