Electrical activation of boron coimplanted with carbon in a silicon substrate
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.date.accessioned | 2014-05-17T02:06:49Z | pt_BR |
dc.date.issued | 1993 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95351 | pt_BR |
dc.description.abstract | It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior of B. However, C+ implanted to a dose equal to or ten times higher than the B+ dose contributed, respectively, to the reduction or enhancement of the electrical activation of B after annealing in the temperature range of 450-700 °C. In addition, the reverse annealing of B is attenuated in the coimplanted samples and suppressed in samples where the C+ implantation damage was annealed prior to the B+ implantation. At temperatures > 700 °C the electrical activation is not significantly affected by the C+ coimplantation. A model considering interaction between C and Si self-interstitial atoms during thermal annealing is proposed to account for the activation behavior of B in the dually implanted samples. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of Applied Physics. Woodbury. Vol. 74, n. 11 (Dec. 1993), p. 6599-6602 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Circuitos integrados | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Dopagem de semicondutores | pt_BR |
dc.title | Electrical activation of boron coimplanted with carbon in a silicon substrate | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000056945 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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