Dopants redistribution during titanium-disilicide formation by rapid thermal processing

Abstract

Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.