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dc.contributor.authorSilva, Antonio Ferreira dapt_BR
dc.contributor.authorSernelius, Bo E.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.date.accessioned2014-05-17T02:07:06Zpt_BR
dc.date.issued1996pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95365pt_BR
dc.description.abstractWe investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi).en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 79, n. 7 (Apr. 1996), p. 3453-3455pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectCondutividade elétricapt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectImpurezaspt_BR
dc.subjectDopagem de semicondutorespt_BR
dc.titleElectrical resistivity of bismuth implanted into siliconpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000140522pt_BR
dc.type.originEstrangeiropt_BR


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