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dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorDanilov, Iuript_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.date.accessioned2014-05-17T02:07:07Zpt_BR
dc.date.issued1997pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95367pt_BR
dc.description.abstractThe stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage concentration level which lead to: (i) the trapping of practically all the carriers (Rs ≈108 Ω/), (ii) the onset of hopping conduction (Rs ≈108 Ω/), and (iii) a significant hopping conduction (Rs ≈106 Ω/). Irrespectively of the ion mass, the temperature range for which the isolation is preserved, i.e., Rs>108 Ω/, extends up to 200 or ≈ 600 °C, respectively, for the cases (i) and (ii). In case (iii), this range comprises temperatures from ≈ 400 to 650 °C. Annealing stages at 200 and 400 °C recover in a great extent the conductivity and improve the carrier mobility in low dose irradiated samples [case (i)]. In samples irradiated to higher doses [cases (ii) and (iii)], the conductivity recovers in a single stage.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 81, n. 2 (Jan. 1997), p. 650-655pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectBombardeamento de ionspt_BR
dc.subjectArseneto de galiopt_BR
dc.subjectMobilidade de ionspt_BR
dc.subjectCondutividade elétricapt_BR
dc.titleThermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ionspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000188545pt_BR
dc.type.originEstrangeiropt_BR


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