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Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2

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Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2

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Título Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2
Autor Baumvol, Israel Jacob Rabin
Salgado, Tania Denise Miskinis
Stedile, Fernanda Chiarello
Radtke, Claudio
Krug, Cristiano
Abstract Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm-². The samples were thermally oxidized in dry O2 at 1050 °C, and the areal densities and profiles of N and O were determined by nuclear reaction analysis and narrow nuclear resonance profiling, evidencing that: (i) the retained amounts of N just after ion beam deposition stayed in the range between 0.3 and 731014 cm-²; (ii) the oxide growth is influenced strongly by the presence of nitrogen, the thickness of the oxide films (which remained between 4 and 30 nm) decreased with the increase of the areal density of nitrogen; (iii) N is partially removed from the system as oxidation proceeds. These observations are discussed in terms of current models for the thermal growth of silicon oxide in the presence of N.
Contido em Journal of applied physics. Woodbury. Vol. 83, no. 10 (May 1998), p. 5579-5581
Assunto Deposição superficial
Nitrogênio : Implantação de íons
Silicio : Oxidacao : Temperatura
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/95402
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