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dc.contributor.authorSchuhl, A.pt_BR
dc.contributor.authorDurand, Olivierpt_BR
dc.contributor.authorChildress, J.R.pt_BR
dc.contributor.authorGeorge, Jean-Mariept_BR
dc.contributor.authorPereira, Luis Gustavopt_BR
dc.date.accessioned2014-05-20T02:04:51Zpt_BR
dc.date.issued1994pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95412pt_BR
dc.description.abstractA new epitaxial “spin-valve”-type system for low-field magnetoresistive detection is described. This system is based on FeiPd epitaxial multilayers grown on (100)MgO by MBE. These films show a very abrupt transition from positive to negative magnetization as the reverse field is applied during hysteresis measurements. We have used these sensitive magnetic properties to fabricate epitaxial spin-valve structures by epitaxial growth of Fe/Ag, Co/Ag, or Co/Cu bilayers on top of a Fe/Pd bilayer. Hysteresis loops and magnetoresistance curves clearly indicate a significant field range with antiparallel alignment of the two components. Magnetoresistive sensitivities of up to 0.3% per Oe at low temperatures have been observed in these structures. The efficiency of the spin-dependent scattering has subsequently been improved either through the addition of planar Co impurities, in both the soft and hard magnetic layer, or by increasing the number of active Fe/Pd interfaces. This approach leads to a drastic improvement of the sensitivity, up to 1.5% per Oersted at room temperature.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 75, n. 10 (May 1994), p. 7061-7063pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectPropriedades magnéticaspt_BR
dc.subjectCrescimento epitaxialpt_BR
dc.subjectMagnetorresistênciapt_BR
dc.titleEpitaxial spin-valve structures for ultra-low-field detectionpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000256598pt_BR
dc.type.originEstrangeiropt_BR


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