![]() |
Para citar ou acessar este item utilize:
http://hdl.handle.net/10183/95418
Título | Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures |
Autor |
Cima, Carlos Alberto
Boudinov, Henri Ivanov Souza, Joel Pereira de Suprun-Belevich, Yu. Fichtner, Paulo Fernando Papaleo |
Abstract | The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing Rutherford backscattering spectrometry, high resolution x-ray diffraction ~HRXRD! analysis and cross section transmission electron microscopy (XTEM). Two distinct layers have been found in the implanted material: A near-surface layer (<0.2 μm thick) where no extended defects are observed and a buried layer (≈0.5 μm thick) containing a dense array of dislocation loops and defect clusters. XTEM analysis revealed a distribution of small spherical cavities presumably filled with Ne, with a diameter <4 nm, extending along the entire depth of the implanted layer. HRXRD studies showed the presence of a positive strain (of expansion), irrespective of the implanted dose and temperature. The findings are discussed in terms of the proposed model which assumes that vacancy-type defects are consumed during the formation of Ne bubbles. |
Contido em | Journal of applied physics. Melville. Vol. 88, no. 4 (Aug. 2000), p. 1771-1775 |
Assunto |
Bolhas
Defeitos estendidos Difração de raios X Discordância Dopagem de semicondutores Implantacao de ions Microscopia eletrônica de transmissão Retroespalhamento rutherford Semicondutores elementares Silicones Tensões internas |
Origem | Estrangeiro |
Tipo | Artigo de periódico |
URI | http://hdl.handle.net/10183/95418 |
Arquivos | Descrição | Formato | |
---|---|---|---|
000275246.pdf (382.7Kb) | Texto completo (inglês) | Adobe PDF | Visualizar/abrir |
Este item está licenciado na Creative Commons License