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Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

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Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

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Título Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
Autor Cima, Carlos Alberto
Boudinov, Henri Ivanov
Souza, Joel Pereira de
Suprun-Belevich, Yu.
Fichtner, Paulo Fernando Papaleo
Abstract The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing Rutherford backscattering spectrometry, high resolution x-ray diffraction ~HRXRD! analysis and cross section transmission electron microscopy (XTEM). Two distinct layers have been found in the implanted material: A near-surface layer (<0.2 μm thick) where no extended defects are observed and a buried layer (≈0.5 μm thick) containing a dense array of dislocation loops and defect clusters. XTEM analysis revealed a distribution of small spherical cavities presumably filled with Ne, with a diameter <4 nm, extending along the entire depth of the implanted layer. HRXRD studies showed the presence of a positive strain (of expansion), irrespective of the implanted dose and temperature. The findings are discussed in terms of the proposed model which assumes that vacancy-type defects are consumed during the formation of Ne bubbles.
Contido em Journal of applied physics. Melville. Vol. 88, no. 4 (Aug. 2000), p. 1771-1775
Assunto Bolhas
Defeitos estendidos
Difracao de raios x
Discordância
Dopagem de semicondutores
Implantacao de ions
Microscopia eletronica de transmissao
Retroespalhamento rutherford
Semicondutores elementares
Silicones
Tensões internas
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/95418
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