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Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

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Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

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Título Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate
Autor Boudinov, Henri Ivanov
Souza, Joel Pereira de
Saul, Cyro Ketzer
Abstract Electrical activation of In of 18%–52% of the implanted dose (531014 cm-²) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ~=0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers.
Contido em Journal of Applied Physics. Melville. Vol. 86, no. 10 (Nov. 1999), p. 5909-5911
Assunto Carbono
Implantacao de ions
Impurezas
Índio : elemento químico
Semicondutores
Silicio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/95423
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