Mostrar registro simples

dc.contributor.authorAlmeida, Rita Maria Cunha dept_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorGanem, Jean-Jacquespt_BR
dc.contributor.authorTrimaille, Isabellept_BR
dc.contributor.authorRigo, Sergept_BR
dc.date.accessioned2014-05-31T02:06:47Zpt_BR
dc.date.issued2004pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95834pt_BR
dc.description.abstractWe present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N2O, as well as annealing in NO of thermally grown silicon oxide films on Si. We obtain growth kinetics and N and O depth distributions for the different growth routes by changing only initial and boundary conditions of a set of nonlinear differential equations. The results suggest that the puzzling differences in film growth rate and N incorporation originate from dynamical effects, rather than in differences in chemical reactions.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Vol. 95, no. 4 (Feb. 2004), p. 1770-1773pt_BR
dc.rightsOpen Accessen
dc.subjectFísicapt_BR
dc.titleThermal growth of silicon oxynitride films on Si : a reaction-diffusion approachpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000400919pt_BR
dc.type.originEstrangeiropt_BR


Thumbnail
   

Este item está licenciado na Creative Commons License

Mostrar registro simples