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Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/

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Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/

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Título Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/
Autor Sias, Uilson Schwantz
Moreira, Eduardo Ceretta
Ribeiro, Euripedes
Boudinov, Henri Ivanov
Amaral, Livio
Behar, Moni
Abstract A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-2200 up to 800°C), and subsequent furnace annealing in N2 ambient was performed. A PL signal in the wavelength range 650–1000 nm was observed. The PL peak wavelength and intensity are dependent on the fluence, implantation and annealing temperatures. It was found that after annealing at 1100°C, both implantations of 1.5x1017 Si/cm² at room temperature or 0.5x1017 Si/cm² at 400°C result in the same PL peak intensity. By varying the implantation temperature we can achieve the same PL efficiency with lower fluences showing that hot implantations play an important role for initial formation of the nanocrystals. The PL intensity evolution as a function of the annealing time was also studied. As the implantation temperature was increased, larger mean size Si nanocrystals were observed by means of dark-field transmission electron microscopy analysis.
Contido em Journal of applied physics. Vol. 95, no. 9 (May 2004), p. 5053-5059
Assunto Compostos de silício
Fotoluminescencia
Implantacao ionica
Microscopia eletronica de transmissao
Nanoparticulas
Semicondutores elementares
Silicio
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/95835
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