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Structural and optical properties of InP quantum dots grown on GaAs(001)

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Structural and optical properties of InP quantum dots grown on GaAs(001)

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Título Structural and optical properties of InP quantum dots grown on GaAs(001)
Autor Godoy, Marcio P.F. de
Nakaema, Marcelo Kiyoshi Kian
Likawa, Fernando
Brasil, Maria José Santos Pompeu
Lopes, João Marcelo Jordão
Bortoleto, José Roberto Ribeiro
Cotta, Mônica Alonso
Paniago, Rogério Magalhães
Mörschbächer, Marcio José
Fichtner, Paulo Fernando Papaleo
Abstract We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescence techniques. The InP dots present an efficient optical emission even when they are uncapped, which is attributed to the low surface recombination velocity in InP. We compare the difference in the optical properties between surface free dots, which are not covered by any material, with dots covered by a GaAs capping layer. We observed a bimodal dispersion of the dot size distribution, giving rise to two distinct emission bands. The results also revealed that the strain accumulated in the InP islands is slightly relieved for samples with large InP amounts. An unexpected result is the relatively large blue shift of the emission band from uncapped samples as compared to capped dots.
Contido em Journal of Applied Physics. Woodbury. vol. 101, no. 7 (Apr. 2007), 073508, 6 p.
Assunto Arseneto de galio
Fosfeto de índio
Pontos quânticos
Propriedades oticas
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/96100
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