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SiO2/SiC structures annealed in D2 18O : compositional and electrical effects

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SiO2/SiC structures annealed in D2 18O : compositional and electrical effects

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Título SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
Autor Pitthan Filho, Eduardo
Corrêa, Silma Alberton
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
Abstract Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.
Contido em Applied physics letters. New York. Vol. 104, no. 11 (Mar. 2014), 4 p.
Assunto Carbeto de silicio
Dióxido de silício
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/96550
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