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The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition

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The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition

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Título The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
Autor Pitthan Filho, Eduardo
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
Abstract To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.
Contido em ECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10
Assunto Carbeto de silicio
Deposicao de filmes finos
Espectroscopia fotoeletrônica de raio-x
Oxidação térmica
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/97010
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