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dc.contributor.authorPitthan Filho, Eduardopt_BR
dc.contributor.authorPalmieri, Rodrigopt_BR
dc.contributor.authorCorrêa, Silma Albertonpt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.date.accessioned2014-06-28T02:09:01Zpt_BR
dc.date.issued2013pt_BR
dc.identifier.issn2162-8742pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/97010pt_BR
dc.description.abstractTo minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10pt_BR
dc.rightsOpen Accessen
dc.subjectDeposicao de filmes finospt_BR
dc.subjectOxidação térmicapt_BR
dc.subjectEspectroscopia fotoeletrônica de raio-xpt_BR
dc.subjectCarbeto de silíciopt_BR
dc.titleThe role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film depositionpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000916321pt_BR
dc.type.originEstrangeiropt_BR


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