• Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks 

      Edon, Vincent; Li, Z.; Hugon, Marie-Christine; Agius, Bernard; Krug, Cristiano; Baumvol, Israel Jacob Rabin; Durand, Olivier; Eypert, Céline (2007) [Artigo de periódico]
      The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate ...