Enhanced damage accumulation in carbon implanted silicon
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Date
1994Type
Abstract
The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, ...
The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature. ...
In
Applied physics letters. New York. Vol. 64, no. 26 (June 1994), p. 3596-3597
Source
Foreign
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