Browsing Exact and Earth Sciences by Author "Danilov, Iuri"

Now showing items 1-8 of 8

    • Electrical activation of carbon in GaAs : implantation temperature effects 

      Danilov, Iuri; Souza, Joel Pereira de; Murel, A.V.; Pudenzi, Marcio Alberto Araujo (2001) [Journal article]
      Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in ...

    • Electrical isolation in GaAs by light ion irradiation : the role of antisite defects 

      Souza, Joel Pereira de; Danilov, Iuri; Boudinov, Henri Ivanov (1996) [Journal article]
      The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning ...

    • Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation 

      Danilov, Iuri; Souza, Joel Pereira de; Boudinov, Henri Ivanov; Murel, A.V.; Shashkin, V.I. (1999) [Journal article]
      The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ...

    • Electrical isolation of InGaP by proton and helium ion irradiation 

      Danilov, Iuri; Souza, Joel Pereira de; Boudinov, Henri Ivanov; Bettini, Jefferson; Carvalho, Mauro Monteiro Garcia de (2002) [Journal article]
      Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the ...

    • Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature 

      Souza, Joel Pereira de; Danilov, Iuri; Boudinov, Henri Ivanov (1998) [Journal article]
      The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at ...

    • Ferromagnetic nanoclusters formed by Mn implantation in GaAs 

      Couto Junior, Odilon Divino Damasceno; Brasil, Maria José Santos Pompeu; Likawa, Fernando; Giles, Carlos Manuel; Adriano, C.; Bortoleto, José Roberto Ribeiro; Pudenzi, Marcio Alberto Araujo; Gutierrez, H.R.; Danilov, Iuri (2005) [Journal article]
      Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs ...

    • Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature 

      Danilov, Iuri; Boudinov, Henri Ivanov; Souza, Joel Pereira de; Drozdov, Yu. N. (2005) [Journal article]
      A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C ...

    • Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions 

      Souza, Joel Pereira de; Danilov, Iuri; Boudinov, Henri Ivanov (1997) [Journal article]
      The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage ...