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    • Ultrafast trapping times in ion implanted InP 

      Carmody, Christine; Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati; Lederer, Max J.; Koley, Vesselin; Luther-Davies, B.; Dao, L.V.; Gal, Michael (2002) [Journal article]
      As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of ...