Now showing items 1-4 of 4

    • Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon 

      Fichtner, Paulo Fernando Papaleo; Behar, Moni; Kaschny, Jorge Ricardo de Araujo; Peeva, Anita; Koegler, Reinhard; Skorupa, Wolfgang (2000) [Journal article]
      He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ...
    • Ion radiation induced diffusion of xe implanted into a polymer film 

      Kaschny, Jorge Ricardo de Araujo; Amaral, Livio; Behar, Moni; Fink, Dietmar (1992) [Journal article]
      In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post-bombarded the ...
    • Overpressurized bubbles versus voids formed in helium implanted annealed silicon 

      Fichtner, Paulo Fernando Papaleo; Kaschny, Jorge Ricardo de Araujo; Yankov, Rossen A.; Mucklich, A.; Kreissig, Ulrich; Skorupa, Wolfgang (1997) [Journal article]
      The formation of helium induced cavities in silicon is studied as a function of implant energy (10 and 40 keV) and dose (131015, 131016, and 531016 cm22). Specimens are analyzed after annealing (800 °C, 10 min) by transmission ...
    • Range and thermal behavior studies of Au and Bi implanted into photoresist films 

      Behar, Moni; Grande, Pedro Luis; Amaral, Livio; Kaschny, Jorge Ricardo de Araujo; Zawislak, Fernando Claudio; Guimaraes, Renato Bastos; Biersack, J.P.; Fink, Dietmar (1990) [Journal article]
      The Rutherford backscattering technique has been used to determine range parameters of Au and Bi íons implanted into AZ1350 photoresist films at energies from 20 to 300 keV. The experimental results are 20 to 25% higher ...