• Thermal stability and diffusion in gadolinium silicate gate dielectric films 

      Landheer, Dolf; Wu, Xiaohua; Morais, Jonder; Baumvol, Israel Jacob Rabin; Pezzi, Rafael Peretti; Miotti, Leonardo; Lennard, W.N.; Kim, Joon-Kon (2001) [Artículo de periódico]
      Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating ...