Navegação Ciências Exatas e da Terra por Autor "Coelho, Artur Vicente Pfeifer"

Resultados 1-2 de 2

    • Characterization of deep level traps responsible for isolation of proton implanted GaAs 

      Boudinov, Henri Ivanov; Coelho, Artur Vicente Pfeifer; Tan, Hoe H.; Jagadish, Chenupati (2003) [Artigo de periódico]
      Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability ...

    • Electrical isolation of p-type GaAs layers by ion irradiation 

      Boudinov, Henri Ivanov; Coelho, Artur Vicente Pfeifer; Souza, Joel Pereira de (2002) [Artigo de periódico]
      The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton ...