Browsing Exact and Earth Sciences by Author "Han, J."

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    • Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC 

      Corrêa, Silma Alberton; Radtke, Claudio; Soares, Gabriel Vieira; Miotti, Leonardo; Baumvol, Israel Jacob Rabin; Dimitrijev, Sima; Han, J.; Hold, L.; Kong, F.; Stedile, Fernanda Chiarello (2009) [Journal article]
      C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy ...

    • Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics 

      Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Hold, L.; Kong, F.; Han, J.; Dimitrijev, Sima; Radtke, Claudio; Stedile, Fernanda Chiarello (2007) [Journal article]
      Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. ...