Navegação Ciências Exatas e da Terra por Autor "Krug, Cristiano"
Resultados 1-20 de 20
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Analytical energy loss distribution for accurate high resolution depth profiling using medium energy ion scattering
(2008) [Artigo de periódico]An analytical approach to ion energy loss distributions capable of simplifying medium energy ion scattering MEIS spectral analysis is presented. This analytical approach preserves the accuracy of recent numerical models ... -
Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
(1998) [Artigo de periódico]The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ... -
Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
(2000) [Artigo de periódico]Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution ... -
Atomic transport and integrity of Al/sub 2/O/sub 3(2.0 nm)/HfO/sub 2/(2.5 nm) gate stacks on Si
(2007) [Artigo de periódico]The integrity of Al2O3 2.0 nm /HfO2 2.5 nm /SiO2 1 nm /Si 001 stacks after rapid thermal annealing at temperature up to 1025 °C was investigated. The structures were prepared by atomic layer deposition and atomic transport ... -
Comment on "Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si" : reply
(2001) [Artigo de periódico] -
Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition
(2005) [Artigo de periódico]We have used nuclear reaction analyses and Rutherford backscattering spectrometry to investigate quantitatively the compositional stability of hafnium aluminate thin films deposited on Sis001d by atomic layer deposition ... -
Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2
(1998) [Artigo de periódico]Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm-². The samples were thermally oxidized in dry O2 at 1050 °C, and ... -
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks
(2007) [Artigo de periódico]The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate ... -
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC
(2009) [Artigo de periódico]Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to ... -
High-resolution depth profiling in ultrathin Al/sub 2/O/sub 3/ films on Si
(2000) [Artigo de periódico]A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy ... -
Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
(2007) [Artigo de periódico]To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial ... -
Interaction of SiC thermal oxidation by-products with SiO2
(2008) [Artigo de periódico]We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon ... -
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substrate
(2011) [Artigo de periódico]Thermally driven atomic transport in HfO2 /GeO2/substrate structures on Ge 001 and Si 001 was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing ... -
Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
(1999) [Artigo de periódico]Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ... -
Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
(1999) [Artigo de periódico]The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on ... -
Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition
(2005) [Artigo de periódico]We report the optical properties of unannealed hafnium–aluminate HfAlO films grown by atomic layer chemical vapor deposition ALCVD and correlate them with the aluminum contents in the films. Vacuum ultraviolet spectroscopic ... -
Oxygen transport and GeO2 stability during thermal oxidation of Ge
(2012) [Artigo de periódico]Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized ... -
Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub 2/ admixture enabling thermally stable metal-insulator-metal capacitors
(2007) [Artigo de periódico]The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and ... -
Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)
(2014) [Artigo de periódico]In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate ... -
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation
(1999) [Artigo de periódico]A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation ...
