Navegação Ciências Exatas e da Terra por Autor "Lee, Byoung Hun"
Resultados 1-2 de 2
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Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
Joshi, Sachin; Krug, Cristiano; Heh, Dawei; Na, Hoon Joo; Harris, Harlan R.; Oh, Jung Woo; Kirsch, Paul D.; Majhi, Prashant; Lee, Byoung Hun; Tseng, Hsing-Huang; Jammy, Raj; Lee, Jack C.; Banerjee, Sanjay K. (2007) [Artigo de periódico]To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial ... -
Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub 2/ admixture enabling thermally stable metal-insulator-metal capacitors
Böscke, Tim S.; Govindarajan, Shrinivas; Kirsch, Paul D.; Hung, Puiyee Y.; Krug, Cristiano; Lee, Byoung Hun; Heitmann, Johannes; Schröder, Uwe; Pant, Gaurang; Gnade, Bruce E.; Krautschneider, Wolfgang (2007) [Artigo de periódico]The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and ...