Navegação Ciências Exatas e da Terra por Autor "Murel, A.V."

Resultados 1-2 de 2

    • Electrical activation of carbon in GaAs : implantation temperature effects 

      Danilov, Iuri; Souza, Joel Pereira de; Murel, A.V.; Pudenzi, Marcio Alberto Araujo (2001) [Artigo de periódico]
      Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in ...

    • Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation 

      Danilov, Iuri; Souza, Joel Pereira de; Boudinov, Henri Ivanov; Murel, A.V.; Shashkin, V.I. (1999) [Artigo de periódico]
      The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ...