• Prolonged and rapid thermal annealing of boron implanted silicon 

      Peter, Celso R.; Souza, Joel Pereira de; Hasenack, Claus Martin (1988) [Artigo de periódico]
      We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3 X 10 14 cm-², 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealIng (RTA) processes performed in a ...