Navegação Ciências Exatas e da Terra por Autor "Pitthan Filho, Eduardo"
Resultados 1-5 de 5
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Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC
Pitthan Filho, Eduardo; Reis, Roberto dos; Corrêa, Silma Alberton; Schmeisser, Dieter; Boudinov, Henri Ivanov; Stedile, Fernanda Chiarello (2016) [Artigo de periódico]Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the ... -
Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
Pitthan Filho, Eduardo; Lopes, L. D.; Palmieri, Rodrigo; Corrêa, Silma Alberton; Soares, Gabriel Vieira; Boudinov, Henri Ivanov; Stedile, Fernanda Chiarello (2013) [Artigo de periódico]In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were ... -
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
Pitthan Filho, Eduardo; Corrêa, Silma Alberton; Boudinov, Henri Ivanov; Stedile, Fernanda Chiarello (2014) [Artigo de periódico]Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and ... -
The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
Pitthan Filho, Eduardo; Palmieri, Rodrigo; Corrêa, Silma Alberton; Soares, Gabriel Vieira; Boudinov, Henri Ivanov; Stedile, Fernanda Chiarello (2013) [Artigo de periódico]To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by ... -
Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
Dartora, Gustavo Henrique Stedile; Pitthan Filho, Eduardo; Stedile, Fernanda Chiarello (2017) [Artigo de periódico]Aiming to understand the processes involved in the formation of the transition region between SiO2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction ...