Navegação Ciências Exatas e da Terra por Assunto "Condutividade elétrica"
Resultados 1-20 de 20
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Calculation of the temperature dependence of the giant mr and application to Co/Cu multilayers
(1994) [Artigo de periódico]Most theoretical models of the giant magnetoresistance (GMR) in metallic magnetic multilayers developed up to now are for the zero-temperature limit, thus neglecting the spin-flip scattering arising from spin fluctuations ... -
Comparison of computed amplitudes of magnetoresistance in spin-valve structures with wafer probe measurements
(1998) [Artigo de periódico]A code has been developed based on the semi-classical theory of giant magnetoresistance of Camley and Barnas [l]. It computes the sheet conductance and magnetoresistance of spin-valve structures. The input parameters are ... -
Conductivity of a metal with inverse-power-law correlated impurities
(1995) [Artigo de periódico]We calculate the cooperon for a system of noninteracting electrons in the presence of random potentials with correlations W(r)= W08(r)+ W,r-<d+u> in d dimensions, for arbitrary values a and d, to first order in W1. Our ... -
Electrical conductivity in electrodeposited Cu-Ge(O) alloy films
(2018) [Artigo de periódico]Integrated circuits currently use mainly copper as the interconnect material; unfortunately the ongoing miniaturization currently requires materials with higher electromigration resistance and possibly improved conductivity. ... -
Electrical isolation in GaAs by light ion irradiation : the role of antisite defects
(1996) [Artigo de periódico]The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning ... -
Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation
(1999) [Artigo de periódico]The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ... -
Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature
(1998) [Artigo de periódico]The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at ... -
Electrical isolation of p-type GaAs layers by ion irradiation
(2002) [Artigo de periódico]The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton ... -
Electrical Resistance and Crystallization Characteristics of Fe/Sub 80/B/Sub 20/a
(1981) [Artigo de periódico]The electrical resistance of amorphous Fe80B20 has been measured as a function of time at various temperatures during an isothermal crystallization process. The results fit a universal curve when ∆R/∆R1 is plotted against ... -
Electrical resistivity of bismuth implanted into silicon
(1996) [Artigo de periódico]We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical ... -
Field and oxygen dependence of the magnetic irreversibility line in yba(2)cu(3)o(7-g)
(1994) [Artigo de periódico]We report on de magnetic susceptibility measurements in polycrystalline YBa2Cu30 7- δ as a function of the oxygen content in the limit of small δ. We focus mainly on the detailed behavior of the zero-fie1dcooled- field-cooled ... -
Glass behavior and the h-t phase diagram of the high-tc ceramic superconductors yba2cu3o7, euba2cu3o7 and gdba2cu3o7
(1989) [Artigo de periódico]We report systematic field-cooled (PC) and zero-field-cooled (ZPC) diamagnetic susceptibility measurements in polycrystalline samples of the high-Tc oxide superconductors RBa2Cu30 7, where R =Y, Eu, or Gd. We focus mainly ... -
Impurity resistivity of the double-donor system Si:P,Bi
(1999) [Artigo de periódico]The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities ... -
Inverse spin-valve-type magnetoresistance in spin engineered multilayered structures
(1994) [Artigo de periódico]The resistivity of magnetic multilayers is generally smaller when the magnetizations of successive layers are parallel, which is the so-called giant magnetoresistance or spin-valve effect. We have been able to reverse this ... -
Magnetoconductivity of a disordered electron system with n orbitals persite
(1994) [Artigo de periódico]In the absence of a magnetic field, two formally equivalent expressions for the conductivity contribute different sets of Feynman diagrams, due to cancellations. We use this result to calculate the magnetoconductivity of ... -
Magnetoresistance of pd-fe and pd-ni-fe alloys
(1983) [Artigo de periódico]The electrical resistivity ofPd-Fe alloys has been measured in magnetic fields parallel and perpendicular to the current, for a wide range of alloy compositions. The influence of atomic ordering on the magnetoresistance ... -
On the temperature dependence of the magnetoresistance of ferromagnetic alloys
(1988) [Artigo de periódico] -
Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions
(1997) [Artigo de periódico]The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage ... -
Thermopower and resistivity in amorphous Cu(1-x) Zr(x) alloys
(1983) [Artigo de periódico]The thermopower and resistivity of a series of Cu1-xZrx alloys have been measured between 2 and 300 K for O. 3 < x <O. 7. The composition dependence of the results cannot be explained on the basis of the simple Ziman ... -
Thermopower and resistivity in amorphous Mg/sub 1-x/Zn/sub x/ alloys
(1982) [Artigo de periódico]Thermopower and resistivity have been measured on a series of Mg1-xZnx amorphous alloys (0.2<X<0.35) over the temperature range 4-300 K. The thermopower data cannot be explained on the basis of the simple Ziman model. Using ...
