Navegação Ciências Exatas e da Terra por Assunto "Difusao em superficies"

Resultados 1-2 de 2

    • Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon 

      Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Stedile, Fernanda Chiarello; Radtke, Claudio; Krug, Cristiano (1999) [Artigo de periódico]
      Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ...

    • Limiting step involved in the thermal growth of silicon oxide films on silicon carbide 

      Vickridge, Ian; Trimaille, Isabelle; Ganem, Jean-Jacques; Rigo, Serge; Radtke, Claudio; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2002) [Artigo de periódico]
      Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ...