Browsing Exact and Earth Sciences by Subject "Estrutura de superfície"

Now showing items 1-3 of 3

    • Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon 

      Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Stedile, Fernanda Chiarello; Radtke, Claudio; Krug, Cristiano (1999) [Journal article]
      Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ...

    • Limiting step involved in the thermal growth of silicon oxide films on silicon carbide 

      Vickridge, Ian; Trimaille, Isabelle; Ganem, Jean-Jacques; Rigo, Serge; Radtke, Claudio; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2002) [Journal article]
      Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ...

    • Ralaxation times of nanoscale deformations on the surface of a polymer thin film near and below the glass transition 

      Papaleo, Ricardo Meurer; Leal, Rafael Gustavo Torres; Carreira, Willian Hasenkamp; Barbosa, Luiz Gustavo de Moura da Silva; Bello, Ivo; Bulla, Agostinho Antônio (2006) [Journal article]
      We report on measurements of relaxation times of nanometer-sized deformations resulting from the impact of individual energetic ions on poly methyl methacrylate surfaces at temperatures close to and below the glass transition ...