Navegação Ciências Exatas e da Terra por Assunto "Implantação de íons"
Resultados 1-20 de 68
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Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
(2004) [Artigo de periódico]In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. ... -
Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
(1998) [Artigo de periódico]The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ... -
Co/ag multilayer film : role of annealing on the magnetic properties
(1992) [Artigo de periódico]Co( 15 A)/Ag(60 A) multilayers produced by electron beam deposition on a 50 A chromium buffer layer over a Si( 111) wafer have been studied by magnetoresistance, saturation magnetization, coercivity, and anisotropy. Annealing ... -
Comment on "Ion mixing of metal/Al bilayers near 77K"
(1989) [Artigo de periódico] -
Comparative study of intermetallic phases formed by direct ion implantation and radiation enhanced diffusion of tin in two kinds of steel
(1985) [Artigo de periódico]The surface layers of high-carbon and stainless steel samples, treated by both direct ion implantation of Sn + ions and radiation enhanced diffusion of tin, are analyzed by means of Rutherford backscattering and 119Sn and ... -
Compositional and magnetic properties of iron nitride thin films
(1990) [Artigo de periódico]The compositional and magnetic properties of iron-nitride thin films deposited by de reactive magnetron sputtering under various nitrogen partial pressure conditions have been investigated by x-ray diffraction, Mossbauer ... -
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
(2000) [Artigo de periódico]He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ... -
Damage accumulation in Si crystal during ion implantation at elevated temperatures : evidence of chemical effects
(2000) [Artigo de periódico]Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and high doses (>=3x1016 cm-²) was studied using Rutherford backscattering spectroscopy, cross-section transmission electron ... -
Effect of irradiation temperature and ion flux on electrical isolation of GaN
(2002) [Artigo de periódico]We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of ... -
Effects of carbon on dynamic annealing and on electrical activation of dopants in silicon substrate
(1994) [Artigo de periódico]The effect of C on the implantation damage accumulation in Si crystal and on the electrical T activation of dopants was investigated, using RBS-channeling technique, sheet resistivity and Hall measurements. The damage ... -
Effects of xe post-bombardment on carbonitrides produced in a low-carbon nitrogen-implanted steel
(1990) [Artigo de periódico]The effects of Xe bombardment on carbonitrides produced by N implantation in a low-carbon steel are studied via conversion electron Mossbauer spectroscopy and nuclear reaction analysis. The results show two main features: ... -
Electrical Activation of Bismuth Implanted Into Silicon by Rapid Thermal Annealing and Kinetics of Defects
(1993) [Artigo de periódico]The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0~x1014 cm-² at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approximately 95% of ... -
Electrical activation of boron coimplanted with carbon in a silicon substrate
(1993) [Artigo de periódico]It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times ... -
Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation
(1999) [Artigo de periódico]The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ... -
Electrical resistivity of bismuth implanted into silicon
(1996) [Artigo de periódico]We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical ... -
Enhanced damage accumulation in carbon implanted silicon
(1994) [Artigo de periódico]The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and ... -
Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate
(1999) [Artigo de periódico]Electrical activation of In of 18%–52% of the implanted dose (531014 cm-²) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield ... -
Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
(1991) [Artigo de periódico]Carrier concentrations at a level of ?Z 1 X 1019 cm - 3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar + 0.1% O2 ambient at 850-1000 ‘C for 10-60 s followed by rapid thermal annealing (RTA) ... -
Gettering of copper in silicon at half of the projected ion range induced by helium implantation
(2002) [Artigo de periódico]Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering /channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior ... -
Growth kinetics of solid-state-reacted fe-zr multilayer films
(1991) [Artigo de periódico]Multilayers of Fee0.33Zr0.67, prepared by electron beam evaporation, have been characterized by conversion electron Mijssbauer spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction. Two phases, one ...