Navegação Ciências Exatas e da Terra por Assunto "Isolantes"

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    • Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation 

      Danilov, Iuri; Souza, Joel Pereira de; Boudinov, Henri Ivanov; Murel, A.V.; Shashkin, V.I. (1999) [Artigo de periódico]
      The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ...