Navegação Ciências Exatas e da Terra por Assunto "Oxidação térmica"
Resultados 1-3 de 3
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Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
(2013) [Artigo de periódico]In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were ... -
The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
(2013) [Artigo de periódico]To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by ... -
Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
(2017) [Artigo de periódico]Aiming to understand the processes involved in the formation of the transition region between SiO2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction ...