• Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure 

      Olivieri, Carlos Alberto; Behar, Moni; Grande, Pedro Luis; Fichtner, Paulo Fernando Papaleo; Zawislak, Fernando Claudio; Biersack, J.P.; Fink, Dietmar (1988) [Artículo de periódico]
      350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). ...