Navegação Engenharias por Autor "Reboh, Shay"
Resultados 1-3 de 3
-
H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates
(2010) [Artigo de periódico]H and He ion implantations allow the formation of nanocracks within controlled subsurface depths in semiconducting materials. Upon annealing, crack propagation and coalescence provides a way of cutting monocrystalline thin ... -
On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies
(2010) [Artigo de periódico]We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and ... -
Orientation of H platelets under local stress in Si
(2008) [Artigo de periódico]Hydrogen is implanted into 001 silicon under the strain field of previously formed overpressurized helium plates. Upon thermal annealing, the hydrogen atoms precipitate into platelet structures oriented within specific 111 ...
