Browsing Engineering by Author "Behar, Moni"

Now showing items 1-4 of 4

    • Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon 

      Fichtner, Paulo Fernando Papaleo; Behar, Moni; Kaschny, Jorge Ricardo de Araujo; Peeva, Anita; Koegler, Reinhard; Skorupa, Wolfgang (2000) [Journal article]
      He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ...

    • Gettering of copper in silicon at half of the projected ion range induced by helium implantation 

      Peeva, Anita; Fichtner, Paulo Fernando Papaleo; Silva, Douglas Langie da; Behar, Moni; Koegler, Reinhard; Skorupa, Wolfgang (2002) [Journal article]
      Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering /channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior ...

    • Implanted boron depth profiles in the az111 photoresist 

      Guimaraes, Renato Bastos; Amaral, Livio; Behar, Moni; Fichtner, Paulo Fernando Papaleo; Zawislak, Fernando Claudio (1988) [Journal article]
      The isotope 1OB has been implanted into the photoresist AZll1 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 1OB(n,a) 7 Li reaction. At 60 keV, the profile changes from a ...

    • Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure 

      Olivieri, Carlos Alberto; Behar, Moni; Grande, Pedro Luis; Fichtner, Paulo Fernando Papaleo; Zawislak, Fernando Claudio; Biersack, J.P.; Fink, Dietmar (1988) [Journal article]
      350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). ...