Navegação Engenharias por Autor "Boudinov, Henri Ivanov"
Resultados 1-4 de 4
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Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
Souza, Joel Pereira de; Cima, Carlos Alberto; Fichtner, Paulo Fernando Papaleo; Boudinov, Henri Ivanov (2004) [Artigo de periódico]In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. ... -
Effects of carbon on dynamic annealing and on electrical activation of dopants in silicon substrate
Souza, Joel Pereira de; Boudinov, Henri Ivanov; Fichtner, Paulo Fernando Papaleo (1994) [Artigo de periódico]The effect of C on the implantation damage accumulation in Si crystal and on the electrical T activation of dopants was investigated, using RBS-channeling technique, sheet resistivity and Hall measurements. The damage ... -
Enhanced damage accumulation in carbon implanted silicon
Souza, Joel Pereira de; Boudinov, Henri Ivanov; Fichtner, Paulo Fernando Papaleo (1994) [Artigo de periódico]The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and ... -
Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
Cima, Carlos Alberto; Boudinov, Henri Ivanov; Souza, Joel Pereira de; Suprun-Belevich, Yu.; Fichtner, Paulo Fernando Papaleo (2000) [Artigo de periódico]The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing ...