Navegação Engenharias por Autor "Koegler, Reinhard"
Resultados 1-2 de 2
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Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
Fichtner, Paulo Fernando Papaleo; Behar, Moni; Kaschny, Jorge Ricardo de Araujo; Peeva, Anita; Koegler, Reinhard; Skorupa, Wolfgang (2000) [Artigo de periódico]He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ... -
Gettering of copper in silicon at half of the projected ion range induced by helium implantation
Peeva, Anita; Fichtner, Paulo Fernando Papaleo; Silva, Douglas Langie da; Behar, Moni; Koegler, Reinhard; Skorupa, Wolfgang (2002) [Artigo de periódico]Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering /channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior ...