Now showing items 1-2 of 2

    • 3-D TCAD Monte Carlo device simulator : state-of-the-art FinFET simulation 

      Furtado, Gabriela Firpo; Camargo, Vinícius Valduga de Almeida; Vasileska, Dragica; Wirth, Gilson Inacio (2021) [Journal article]
      This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study ...
    • Monte Carlo simulation of hole transport in SiGe alloys 

      Soares, Caroline dos Santos; Rossetto, Alan Carlos Junior; Vasileska, Dragica; Wirth, Gilson Inacio (2021) [Journal article]
      This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the ...