Navegação Engenharias por Autor "Wirth, Gilson Inacio"
Resultados 1-10 de 10
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3-D TCAD Monte Carlo device simulator : state-of-the-art FinFET simulation
Furtado, Gabriela Firpo; Camargo, Vinícius Valduga de Almeida; Vasileska, Dragica; Wirth, Gilson Inacio (2021) [Artigo de periódico]This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study ... -
Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
Silva, Vanessa Cristina Pereira da; Wirth, Gilson Inacio; Martino, João Antonio; Agopian, Paula Ghedini Der (2020) [Artigo de periódico]This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence ... -
Analysis of total ionizing dose effects on 0.13 µm technology-temperature-compensated voltage references
Both, Thiago Hanna; Colombo, Dalton Martini; Dallasen, Ricardo Vanni; Wirth, Gilson Inacio (2013) [Artigo de periódico] -
An electric-based model for coupling traps effect on random telegraph noise
Becker, Thales Exenberger; Alves, Pedro Augusto Böckmann; Moser, Eduardo Pellin; Wirth, Gilson Inacio (2020) [Artigo de periódico]In this work, we present a novel understanding about the anomalous Random Telegraph Noise (aRTN), asserting the existence of coupling effect among multiple traps regarding current amplitude deviation. Based on the examination ... -
A design methodology using the inversion coefficient for low-voltage low-power CMOS voltage references
Colombo, Dalton Martini; Fayomi, Christian Jésus B.; Nabki, Frederic; Ferreira, Luiz Fernando; Wirth, Gilson Inacio; Bampi, Sergio (2011) [Artigo de periódico] -
Monte Carlo simulation of hole transport in SiGe alloys
Soares, Caroline dos Santos; Rossetto, Alan Carlos Junior; Vasileska, Dragica; Wirth, Gilson Inacio (2021) [Artigo de periódico]This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the ... -
Probabilistic approach for yield analysis of dynamic logic circuits
Brusamarello, Lucas; Silva, Roberto da; Wirth, Gilson Inacio; Reis, Ricardo Augusto da Luz (2008) [Artigo de periódico]In deep-submicrometer technologies, process variability challenges the design of high yield integrated circuits. While device critical dimensions and threshold voltage shrink, leakage currents drastically increase, threatening ... -
Single event transients in logic circuits - load and propagation induced pulse broadening
Wirth, Gilson Inacio; Kastensmidt, Fernanda Gusmão de Lima; Ribeiro, Ivandro da Silva (2008) [Artigo de periódico]The generation and propagation of single event transients (SET) in logic gate chains is studied and modeled. Regarding SET generation, we investigate the dependence of the generated SET pulse width on the struck node ... -
Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
Wirth, Gilson Inacio; Silva, Roberto da; Brederlow, Ralf (2007) [Artigo de periódico]This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, ... -
Tbulk-BICS : a Built-in current sensor robust to process and temperature variations for soft error detection
Henes Neto, Egas; Kastensmidt, Fernanda Gusmão de Lima; Wirth, Gilson Inacio (2008) [Artigo de periódico]This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor ...