• Aspectos de robustez para memórias SRAM em FDSOI 

      Marques, Cleiton Magano (2021) [Dissertação]
      A evolução tecnológica permitiu a redução agressiva do tamanho dos transistores, proporcionando melhorias nos aspectos de desempenho e funcionalidade geral da eletrônica. Hoje, a microeletrônica se tornou parte essencial ...
    • Memory circuit hardening to Multiple-Cell Upsets 

      Brendler, Leonardo Heitich (2024) [Tese]
      A new era of space exploration is coming with an exponential increase in satellites and a drastic cost reduction. Memory circuits are a fundamental part of space applications, and techniques to deal with the radiation ...
    • Reliability evaluation of finFET-based SRAMs in the presence of resistive defects 

      Copetti, Thiago Santos (2021) [Tese]
      The development of Fin Field Effect Transistor (FinFET) has made possible the continuous scaling-down of Complementary Metal-Oxide-Semiconductor (CMOS) technology, overcoming issues caused by the Short-Channel Effects. In ...