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    • Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation 

      Baumvol, Israel Jacob Rabin; Krug, Cristiano; Stedile, Fernanda Chiarello; Green, Martin L.; Jacobson, D.C.; Eaglesham, D.; Bernstein, J.D.; Shao, J.; Denholm, A.S.; Kellerman, P.L. (1999) [Journal article]
      A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation ...