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dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.contributor.authorMorais, Jonderpt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorRotondaro, Antonio L.P.pt_BR
dc.contributor.authorVisokay, Mark R.pt_BR
dc.contributor.authorChambers, James Josephpt_BR
dc.contributor.authorQuevedo-Lopez, M.pt_BR
dc.contributor.authorColombo, Luigipt_BR
dc.date.accessioned2016-05-24T02:10:39Zpt_BR
dc.date.issued2004pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141683pt_BR
dc.description.abstractHfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N2 and O2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O2 ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 85, no. 19 (Nov. 2004), p. 4460-4462pt_BR
dc.rightsOpen Accessen
dc.subjectSiliciopt_BR
dc.subjectFilmes finospt_BR
dc.subjectÓxido de silíciopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectOxinitruro de háfnio silíciopt_BR
dc.subjectReacoes nuclearespt_BR
dc.titleExchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profilingpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000638886pt_BR
dc.type.originEstrangeiropt_BR


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