Now showing items 1-20 of 26

    • Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films 

      Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Radtke, Claudio; Krug, Cristiano; Andrade, Jones de (1998) [Journal article]
      The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ...
    • Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures 

      McDonald, K.; Huang, M.B.; Weller, R.A.; Feldman, L.C.; Williams, J.R.; Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2000) [Journal article]
      The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ...
    • Effects of ion irradiation in the thermal oxidation of SIC 

      Radtke, Claudio; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2002) [Journal article]
      We investigated the thermal growth of SiO₂ films on 6H-SiC (0001) samples irradiated with 170 keV Ar⁺ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results ...
    • Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC 

      Corrêa, Silma Alberton; Radtke, Claudio; Soares, Gabriel Vieira; Miotti, Leonardo; Baumvol, Israel Jacob Rabin; Dimitrijev, Sima; Han, J.; Hold, L.; Kong, F.; Stedile, Fernanda Chiarello (2009) [Journal article]
      C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy ...
    • Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition 

      Costa, Marcelo Eduardo Huguenin Maia da; Baumvol, Israel Jacob Rabin; Radtke, Claudio; Jacobsohn, Luiz Gustavo; Zamora, R. R. M.; Freire Junior, Fernando Lazaro (2004) [Journal article]
      Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200–600 °C. The structural and compositional modifications ...
    • Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2 

      Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Stedile, Fernanda Chiarello; Radtke, Claudio; Krug, Cristiano (1998) [Journal article]
      Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm-². The samples were thermally oxidized in dry O2 at 1050 °C, and ...
    • Enhanced hydrogen bonding stregth observed in hydrogenated SiC and SiO2/SiC structures 

      Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Radtke, Claudio; Stedile, Fernanda Chiarello (2007) [Journal article]
      Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen deuterium is found near ...
    • Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC 

      Corrêa, Silma Alberton; Marmitt, Gabriel Guterres; Bom, Nicolau Molina; Rosa, Aline Tais da; Stedile, Fernanda Chiarello; Radtke, Claudio; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Krug, Cristiano; Gobbi, Angelo Luiz (2009) [Journal article]
      Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to ...
    • GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications 

      Bom, Nicolau Molina; Soares, Gabriel Vieira; Hartmann, Samuel; Bordin, Anderson; Radtke, Claudio (2014) [Journal article]
      Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. ...
    • Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide 

      Palmieri, Rodrigo; Radtke, Claudio; Boudinov, Henri Ivanov; Silva Júnior, Eronides Felisberto da (2009) [Journal article]
      The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density ...
    • Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies 

      Radtke, Claudio; Baumvol, Israel Jacob Rabin; Morais, Jonder; Stedile, Fernanda Chiarello (2001) [Journal article]
      Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon ...
    • Interaction of HfO/sub 2//SiO/sub 2/Si structures with deuterium gas 

      Driemeier, Carlos Eduardo; Miotti, Leonardo; Radtke, Claudio; Gusev, Evgeni P.; Kim, M.J.; Wallace, Robert M. (2006) [Journal article]
      HfO2 films 2.5 to 12 nm deposited on thermal SiO2 1.5 nm on Si were annealed in deuterium gas at 400–600 °C and incorporated D amounts were quantified using the D 3He, p 4He nuclear reaction.We found 1013 D cm−2 in the ...
    • Interaction of SiC thermal oxidation by-products with SiO2 

      Radtke, Claudio; Stedile, Fernanda Chiarello; Soares, Gabriel Vieira; Krug, Cristiano; Rosa, Elisa Brod Oliveira da; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin; Pezzi, Rafael Peretti (2008) [Journal article]
      We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon ...
    • Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substrate 

      Soares, Gabriel Vieira; Krug, Cristiano; Miotti, Leonardo; Bastos, Karen Paz; Lucovsky, Gerald; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2011) [Journal article]
      Thermally driven atomic transport in HfO2 /GeO2/substrate structures on Ge 001 and Si 001 was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing ...
    • Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon 

      Baumvol, Israel Jacob Rabin; Salgado, Tania Denise Miskinis; Stedile, Fernanda Chiarello; Radtke, Claudio; Krug, Cristiano (1999) [Journal article]
      Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ...
    • Limiting step involved in the thermal growth of silicon oxide films on silicon carbide 

      Vickridge, Ian; Trimaille, Isabelle; Ganem, Jean-Jacques; Rigo, Serge; Radtke, Claudio; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2002) [Journal article]
      Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ...
    • Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses 

      Miotti, Leonardo; Driemeier, Carlos Eduardo; Tatsch, Felipe Wolff; Radtke, Claudio; Baumvol, Israel Jacob Rabin (2006) [Journal article]
      Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C ...
    • Morphological and compositional changes in the SiO/sub 2//SiC interface region induced by oxide thermal growth 

      Soares, Gabriel Vieira; Radtke, Claudio; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2006) [Journal article]
      Changes in morphology and composition of interfacial regions of thermally grown SiO2 films on SiC in dry O2 induced by reoxidations were investigated using atomic force microscopy and oxygen profiling. The gradual oxygen ...
    • Oxygen transport and GeO2 stability during thermal oxidation of Ge 

      Silva, Samoel Renan Mello da; Rolim, Guilherme Koszeniewski; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Krug, Cristiano; Miotti, Leonardo; Freire Junior, Fernando Lazaro; Costa, Marcelo Eduardo Huguenin Maia da; Radtke, Claudio (2012) [Journal article]
      Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized ...
    • Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC 

      Radtke, Claudio; Baumvol, Israel Jacob Rabin; Ferrera, Bauer Costa; Stedile, Fernanda Chiarello (2004) [Journal article]
      Thermal oxidation of 6H-SiC was investigated by means of isotopic tracing and narrow nuclear resonant reaction profiling techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations ...