Now showing items 1-2 of 2

    • Oxygen species in HfO/sub 2/ films : an in situ x-ray photoelectron spectroscopy study 

      Driemeier, Carlos Eduardo; Wallace, Robert M.; Baumvol, Israel Jacob Rabin (2007) [Journal article]
      The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron spectroscopy in the O 1s spectral region. In addition to trivial O forming only O-Hf bonds, O 1s signals corresponding to ...
    • Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100) 

      Soares, Gabriel Vieira; Feijó, Tais Orestes; Baumvol, Israel Jacob Rabin; Aguzzoli, Cesar; Krug, Cristiano; Radtke, Claudio (2014) [Journal article]
      In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate ...