Now showing items 1-4 of 4

    • Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon 

      Fichtner, Paulo Fernando Papaleo; Behar, Moni; Kaschny, Jorge Ricardo de Araujo; Peeva, Anita; Koegler, Reinhard; Skorupa, Wolfgang (2000) [Journal article]
      He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ...
    • Coupled dynamics of interacting spin-1 bosons in a double-well potential 

      Carvalho, David William Sabino; Foerster, Angela; Gusmao, Miguel Angelo Cavalheiro (2018) [Journal article]
      We present a detailed analysis of dynamical processes involving two or three particles in a double-well potential. Motivated by experimental realizations of such a system with optically trapped cold atoms, we focus on ...
    • Ground states of spin-1 bosons in asymmetric double wells 

      Carvalho, David William Sabino; Foerster, Angela; Gusmao, Miguel Angelo Cavalheiro (2015) [Journal article]
      In this work we investigate the different states of a system of spin-1 bosons in two potential wells connected by tunneling, with spin-dependent interaction. The model utilizes the well-known Bose-Hubbard Hamiltonian, ...
    • Two-site Bose-Hubbard model with nonlinear tunneling : classical and quantum analysis 

      Lima, Diefferson Rubeni da Rosa de; Links, Jon; Isaac, Phillip S.; Foerster, Angela (2017) [Journal article]
      The extended Bose-Hubbard model for a double-well potential with atom-pair tunneling is studied. Starting with a classical analysis we determine the existence of three quantum phases: self-trapping, phase-locking, and ...